On October 7th, the Royal Swedish Academy of Sciences awarded the 2014 Nobel Prize in Physics to Japanese scientists Akasaka Yoshio and Amano, who invented high-brightness blue light-emitting diodes (LEDs), and Japanese-American scientist Nakamura Shuji in recognition of their Discover the contribution of new efficient, environmentally friendly light sources. The method of producing high-brightness blue light from semiconductors is a fundamental change in the field of optical technology. Blue LED light has always been a technical problem, and it was first developed in 1989, while red and green LED light appeared 30 years ago. The addition of blue LEDs allows white light to be created in new ways, so that we have a longer lasting and more efficient LED light instead of the original light source. The Royal Swedish Academy of Sciences announced this year's list of winners: The emergence of LED lights has enabled us to find longer-lasting, more energy-efficient sources of light beyond traditional light sources. The invention opened up a lighting revolution in which incandescent bulbs illuminate the 20th century and the 21st century will be illuminated by LED lights. Compared with incandescent lamps and fluorescent lamps, LEDs have lower energy consumption, longer life, and intelligent control. They are energy-saving and environmentally friendly green lighting. Therefore, after entering the market, there is an explosive growth. Yang Jiexiang, manager of the National Semiconductor Lighting Application System Engineering Technology Research Center, said that China's LED output value in 2010 was more than 70 billion yuan; by 2013, the annual output value soared to more than 500 billion yuan. The lighting of various places such as homes, offices, roads, and gorgeous landscape lighting, these market main forces are now LEDs. Rare metal gallium, indium and other materials can contribute to the development of LED lighting technology. At present, the core materials of LED light sources are mainly rare metal gallium (Ga), indium (In) and arsenic (AS), phosphorus (P) compounds, and based on wide band gap semiconductor materials gallium nitride (GaN) and indium nitride InGaN is also the most commercially available LED luminescent material. As LED light sources become more widely used, a large number of light-emitting semiconductor materials made of rare metal compounds will also have a greater demand. According to statistics, in 2013, the output value of China's chip link reached 10.5 billion yuan, an increase of 31.5; the output growth rate was as high as 61, of which the output of GaN chips accounted for 65, while the output of Quaternary chips based on InGaAlP chips accounted for 25, GaAs and other chips account for about 10%. According to experts' prediction, in 2014 China's LED industry will continue its upward trend in 2013, ushered in a new round of growth, and the growth rate is expected to reach 40 or so. The rapid development of global LED lighting will certainly drive the rapid growth of demand for rare semiconductor metals such as gallium and indium, and will also drive more and more companies and individuals to pay attention to rare metals such as indium and gallium. As the world's largest spot exchange of rare metal and inventories of rare metals such as indium and gallium, the predominance of the Pan-Asian Nonferrous Metals Exchange in the rare metals industry will gradually become prominent.
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